TDM3660 mosfet equivalent, n-channel enhancement mode mosfet.
* RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 10.5mΩ @ VGS=10V
* High Power and current handling capability
* Lead free product is available
* Surface Moun.
GENERAL FEATURES
* RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 10.5mΩ @ VGS=10V
* High Power and current handling.
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