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TDM4953 - P-Channel Enhancement Mode MOSFET

General Description

The TDM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -5.1A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D1 D2 G1 G2 S1 S2 Schematic diagram Marking and pin Assignment.

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Datasheet Details

Part number TDM4953
Manufacturer Techcode
File Size 268.04 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet TDM4953 Datasheet

Full PDF Text Transcription for TDM4953 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TDM4953. For precise diagrams, and layout, please refer to the original PDF.

P-Channel Enhancement Mode Power MOSFET Datasheet TDM4953 DESCRIPTION The TDM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera...

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nch technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON) < 85mΩ @ VGS=-4.