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TC660 Datasheet Preview

TC660 Datasheet

100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER

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EVALUATION
KIT
AVAILABLE
1
TC660
100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
FEATURES
s Pin Compatible with TC7660
s High Output Current ..................................... 100mA
s Converts (+1.5V to 5.5V) to (– 1.5V to – 5.5V)
s Power Efficiency @100mA ......................... 88% typ
s Low Power Consumption ................ 200µA @ 5 VIN
s Low Cost and Easy to Use
— Only Two External Capacitors Required
s Selectable Oscillator Frequency ....... 10kHz/90kHz
s ESD Protection ................................................... 4kV
APPLICATIONS
s Laptop Computers
s µP Based Controllers
s Process Instrumentation
s Automotive Instruments
PIN CONFIGURATION (DIP and SOIC)
GENERAL DESCRIPTION
The TC660 DC-to-DC voltage converter generates a
negative voltage supply, that can support a 100mA maxi-
mum load, from a positive voltage input of 1.5V to 5.5V. Only
two external capacitors are required.
Power supply voltage is stored on an undedicated
capacitor then inverted and transferred to an output reser-
voir capacitor. The on-board oscillator normally runs at a
frequency of 10kHz with V+ at 5V. This frequency can be
lowered by the addition of an external capacitor from OSC
(pin 7) to ground, or raised to 90kHz by connecting the
frequency control pin (FC) to V+, in order to optimize capaci-
tor size, quiescent current, and output voltage ripple
frequency. Operation using input voltage between 1.5V and
3.0V is accommodated by grounding the LV input (pin 6).
Operation at higher input voltages (3.0V to 5.5V) is accom-
plished by leaving LV open.
The TC660 open circuit output voltage is within 0.1% of
the input voltage with the output open-circuited. Power
conversion efficiency is 98% when output load is between
2mA and 5mA.
2
3
4
FC 1
CAP + 2
8 V+
7 OSC
www.DGaNtaDShe3et4TUC.6c6o0mCPA 6 LV
TC660EPA
CAP 4
5 VOUT
FC 1
CAP + 2
8 V+
7 OSC
GND 3 TC660COA 6 LV
TC660EOA
CAP 4
5 VOUT
FUNCTIONAL BLOCK DIAGRAM
1
FC
ORDERING INFORMATION
Part No.
Package
TC660COA
TC660CPA
TC660EOA
TC660EPA
TC7660EV
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
Evaluation Kit for
Charge Pump Family
V + CAP +
82
Temp. Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
5
6
OSC
7
RC
OSCILLATOR
6
LV
÷2
INTERNAL
VOLTAGE
REGULATOR
VOLTAGE–
LEVEL
TRANSLATOR
TC660
TELCOM SEMICONDUCTOR, INC.
3
GND
4 CAP
5 VOUT
LOGIC
NETWORK
7
8
TC660-2 9/10/96
4-5




TelCom Semiconductor

TC660 Datasheet Preview

TC660 Datasheet

100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER

No Preview Available !

100mA CHARGE PUMP DC-TO-DC
VOLTAGE CONVERTER
TC660
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ........................................................... +6V
LV, FC, OSC Input
Voltage (Note 1) ....................... VOUT – 0.3V to (V+ +0.3V)
Current Into LV (Note 1) ...................... 20 µA for V+ >3.5V
Output Short Duration (VSUPPLY 5.5V) (Note 3) .. 10 Sec
Power Dissipation (Note 2) (TA 70°C)
SOIC ............................................................... 470mW
Plastic DIP ......................................................730mW
Operating Temperature Range
C Suffix .................................................. 0°C to +70°C
E Suffix ............................................. – 40°C to +85°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Specifications Measured Over Operating Temperature Range With,
V+ = 5V, COSC = Open, C1, C2 = 150µF, FC = Open, Test Circuit
(Figure 1), unless otherwise indicated.
Symbol Parameter
Test Conditions
Min Typ Max Unit
I+ Supply Current
RL =
FC pin = OPEN or GND
FC pin = V+
— 200 500 µA
—1
3 mA
V+ Supply Voltage Range
LV = HIGH, RL = 1 k
3 — 5.5 V
LV = GND, RL = 1 k
1.5 — 5.5
LV = OUT, RL = 1 k(Figure 9)
2.5 — 5.5
ROUT
Output Source Resistance
IOUT = 100mA
— 6.5 10
IOUT
Output Current
VOUT < – 4V
100 —
— mA
wwFwO.DSCataSheet4U.Ocosmcillator Frequency
Pin 7 open; Pin 1 open or GND
Pin 1 = V+
— 10 — kHz
— 90 —
IOSC
Input Current
Pin 1 open
Pin 1 = V+
+1.1 µA
— +5 —
PEFF
Power Efficiency (Note 4)
RL = 1 kconnected between V+ & VOUT
96 98 — %
RL = 500connected between VOUT & GND 92 96 —
IL = 100mA to GND
— 88 —
VOUT EFF
Voltage Conversion Efficiency
RL =
99 99.9 — %
NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no
inputs from sources operating from external supplies be applied prior to "power up" of the TC660.
2. Derate linearly above 50°C by 5.5 mW/°C.
3. To prevent damaging the device, do not short VOUT to V+.
4. To maximize output voltage and efficiency performance, use low ESR capacitors for C1 and C2.
4-6 TELCOM SEMICONDUCTOR, INC.


Part Number TC660
Description 100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
Maker TelCom Semiconductor
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TC660 Datasheet PDF






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