Datasheet Summary
- Die Specifications
UltraCMOS® High-speed FET and GaN Transistor Driver, 20 MHz
Product Specification
Features
- TID = 100 krad(Si)
- SEL Immune
- High- and Low-side FET drivers
- Dead-time control
- Fast propagation delay, 9 ns
- Tri-state enable mode
- Sub-nanosecond rise and fall time
- 2 A / 4 A peak source/sink current
- Bumped flip chip die
Applications
- dc- dc conversions
- ac- dc conversions
- Orbital Point of Load (POL) module power distribution
- Motor driver
Product Description
The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT)...