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TD99102 Datasheet High-speed Fet And Gan Transistor Driver

Manufacturer: Teledyne

Overview: TD99102 - Die Specifications UltraCMOS® High-speed FET and GaN Transistor Driver, 20 MHz Product.

Datasheet Details

Part number TD99102
Manufacturer Teledyne
File Size 1.35 MB
Description High-speed FET and GaN Transistor Driver
Datasheet TD99102-Teledyne.pdf

General Description

The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT) and power MOSFETs.

The outputs of the TD99102 are capable of providing switching transition speeds in the subnanosecond range for switching applications up to 20 MHz.

The TD99102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth.

Key Features

  • TID = 100 krad(Si).
  • SEL Immune.
  • High- and Low-side FET drivers.
  • Dead-time control.
  • Fast propagation delay, 9 ns.
  • Tri-state enable mode.
  • Sub-nanosecond rise and fall time.
  • 2 A / 4 A peak source/sink current.
  • Bumped flip chip die.

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