D55NF06 Datasheet - Thinki Semiconductor

N-CHANNEL POWER MOSFET TRANSISTOR

D55NF06 Features

* 12 3 TO-252/DPAK

* RDS(ON) = 23mȍ@VGS = 10 V

* Ultra low gate charge ( typical 30 nC )

* Low reverse transfer capacitance ( CRSS = typical 80 pF )

* Fast switching capability

* 100% avalanche energy specified

* Improved dv/dt capability

* SYMBOL U55NF06 P55NF06 F55

D55NF06 General Description

12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching.

D55NF06 Datasheet (299.71 KB)

D55NF06 Datasheet Preview — Preview of D55NF06 PDF

Datasheet Details

Part number:

D55NF06

Manufacturer:

Thinki Semiconductor

File Size:

299.71 KB

Description:

N-channel power mosfet transistor.

📁 Related Datasheet

D55342 Qualified Thin Film Resistor (Vishay)

D5555C UPD5555 (NEC Electronics)

D55A7D PNP POWER DARLINGTON TRANSISTORS (GE)

D55FY7D PNP POWER DARLINGTON TRANSISTORS (GE)

D55V0M1B2WS 55V BIDIRECTIONAL TVS DIODE (Diodes)

D5001UK METAL GATE RF SILICON FET (Seme LAB)

D5002UK METAL GATE RF SILICON FET (Seme LAB)

D5006UK METAL GATE RF SILICON FET (Seme LAB)

D5007-H2-DIM-MR16 LED SPOT LIGHT (WINSUN)

D5007UK METAL GATE RF SILICON FET (Seme LAB)

TAGS

D55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Thinki Semiconductor

Image Gallery

D55NF06 Features

D55NF06 General Description

Datasheet Details

File Size:

Description:

D55NF06 Distributor