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DK48N80 - N-Channel Trench Process Power MOSFET

General Description

The DK48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Key Features

  • VDS=70V;ID=80A@ VGS=10V; RDS(ON).

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Datasheet Details

Part number DK48N80
Manufacturer Thinki Semiconductor
File Size 424.03 KB
Description N-Channel Trench Process Power MOSFET
Datasheet download datasheet DK48N80 Datasheet

Full PDF Text Transcription for DK48N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DK48N80. For precise diagrams, and layout, please refer to the original PDF.

DK48N80 ® Pb Free Plating Product DK48N80 Pb N-Channel Trench Process Power MOSFET Transistors General Description The DK48N80 is N-channel MOS Field Effect Transistor de...

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al Description The DK48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=70V;ID=80A@ VGS=10V; RDS(ON)<5.8mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 48V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply DK48N80 (TO-220 HeatSink) G DS Schematic Diagram VDSS = 70V IDSS = 80A RDS(ON) = 5.5mΩ Table