Datasheet Details
| Part number | F60UP30DN |
|---|---|
| Manufacturer | Thinki Semiconductor |
| File Size | 5.00 MB |
| Description | Ultra Fast Recovery Rectifiers |
| Datasheet | F60UP30DN-ThinkiSemiconductor.pdf |
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Overview: F60UP30DN Pb Free Plating Product F60UP30DN Pb 60Amperes,300Volts Dual mon Cathode Ultra Fast Recovery Rectifiers APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic.
| Part number | F60UP30DN |
|---|---|
| Manufacturer | Thinki Semiconductor |
| File Size | 5.00 MB |
| Description | Ultra Fast Recovery Rectifiers |
| Datasheet | F60UP30DN-ThinkiSemiconductor.pdf |
|
|
|
F60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
Absolute Maximum Ratings Parameter Repetitive peak reverse voltage Symbol VRRM Test Conditions Values 300 Units V Continuous forward current IF(AV) Tc =110°C 60 Single pulse forward current IFSM Tc =25°C 600 A Maximum repetitive forward current IFRM Square wave, 20kHZ 150 Operating junction Tj 175 °C Storage temperatures Tstg -55 to +175 °C Electrical characteristics (Ta=25°C unless otherwise specified) Parameter Breakdown voltage Blocking voltage Symbol VBR, VR Forward voltage (Per Diode) VF Test Conditions IR=100µA IF=30A IF=30A, Tj =125°C Reverse leakage current(Per Diode) IR VR= VRRM Tj=150°C, VR=300V Reverse recovery time(Per Diode) trr Thermal characteristics Paramter IF=0.5A, IR=1A, IRR=0.25A IF=1A,VR=30V, di/dt =200A/us Symbol Junction-to-Case RθJC Min Typ.
300 0.96 0.85 35 26 Typ 0.8 Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
F60UP30DN | FFAF60UP30DN | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| F60UP20DN | Common Cathode Fast Recovery Epitaxial Diode |
| F60SA60DS | 16.0 Ampere Insulated Stealth Dual Series Connection Fast Recovery Rectifiers |