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Thinki Semiconductor

F80UP40DN Datasheet Preview

F80UP40DN Datasheet

Common Cathode Fast Recovery Epitaxial Diode

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F80UP40DN
®
F80UP40DN
Pb
Pb Free Plating Product
80 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-3PN/TO-3PB
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
Anode
GENERAL DESCRIPTION
F80UP40DN using matured FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
V RRM
I F(AV)
I F(RMS)
I FSM
PD
TJ
T STG
Torque
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
TC=110°C, Per Diode
TC=110°C, Per Package
TC=110°C, Per Diode
TJ=45°C, t=10ms, 50Hz, Sine
RecommendedM3
400
400
40
80
56
400
156
-40 to +150
-40 to +150
1.1
V
V
A
A
A
A
W
°C
°C
N·m
R θJC
Thermal Resistance
Junction-to-Case
0.8 °C /W
Weight
ELECTRICAL CHARACTERISTICS
6.0 g
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IRM Reverse Leakage Current
VR=400V
VR=400V, TJ=125°C
-- -- 10 µA
-- -- 150 µA
VF Forward Voltage
I F =40A
IF=40A, TJ=125°C
-- 1.3 1.8
-- 1.1
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 22 --
ns
trr Reverse Recovery Time
VR=200V, IF=40A
-- 52 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 4.5 --
A
trr Reverse Recovery Time
VR=200V, IF=40A
-- 71 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 9 -- A
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/3
http://www.thinkisemi.com/




Thinki Semiconductor

F80UP40DN Datasheet Preview

F80UP40DN Datasheet

Common Cathode Fast Recovery Epitaxial Diode

No Preview Available !

F80UP40DN
®
120
100
80
60
TJ =125°C
40
TJ =25°C
20
0
0 0.3 0.6 0.9 1.2 1.5
VFV
Fig1. Forward Voltage Drop vs Forward Current
50
VR=200V
TJ =125°C
40
IF=80A
30
20
10
IF=40A
IF=20A
0
0 200 400 600 800 1000
diF/dtA/μs
Fig3. Reverse Recovery Current vs diF/dt
1.2
1
0.8
trr
0.6
IRRM
0.4
Qrr
0.2
0
0 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
150
120
IF=80A
90
VR=200V
TJ =125°C
60
IF=40A
30 IF=20A
00 200 400 600 800 1000
diF/dtA/μs
Fig2. Reverse Recovery Time vs diF/dt
600
VR=200V
TJ =125°C
500
400
IF=80A
300
IF=40A
IF=20A
200
100
00 200 400 600 800 1000
diF/dtA/μs
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/3
http://www.thinkisemi.com/


Part Number F80UP40DN
Description Common Cathode Fast Recovery Epitaxial Diode
Maker Thinki Semiconductor
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