FQP50N06
Features
- 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
- Low gate charge ( typical 31 n C)
- Low Crss ( typical 65 p F)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
1. Gate {
{ 2. Drain
- ◀▲
- -
{ 3. Source
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application.
BVDSS = 60V RDS(ON) = 0.022 ohm ID = 50A
TO-220M
23 1
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
Parameter
Drain-Source Voltage
Drain...
