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Thinki Semiconductor

FQP65N06 Datasheet Preview

FQP65N06 Datasheet

N-Channel Power MOSFET

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FQP65N06
®
FQP65N06
Pb
Pb Free Plating Product
65A,60V Heatsink Planar N-Channel Power MOSFET
Features
• 65A, 60V, RDS(on) = 0.016@VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
1. Gate {
{ 2. Drain
◀▲
{ 3. Source
BVDSS = 60V
RDS(ON) = 0.016 ohm
ID = 65A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M pkg is well suited for
adaptor power unit and small power inverter application.
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220M
FQP65N06
60
65
46.1
260
± 25
650
65
15.0
7.0
150
1.00
-55 to +175
300
23
1
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Typ
Max
Units
--
1.00
°C/W
0.5 -- °C/W
-- 62.5 °C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/6
http://www.thinkisemi.com/




Thinki Semiconductor

FQP65N06 Datasheet Preview

FQP65N06 Datasheet

N-Channel Power MOSFET

No Preview Available !

FQP65N06
®
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60 -- -- V
ID = 250 µA, Referenced to 25°C -- 0.07 -- V/°C
IDSS
IGSSF
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
VGS = 25 V, VDS = 0 V
-- -- 1 µA
-- -- 10 µA
-- -- 100 nA
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
-- -- -100 nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID =32.5 A
VDS = 25 V, ID = 32.5 A (Note 4)
2.0 --
4.0
-- 0.012 0.016
-- 48
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1850 2410
-- 700 910
-- 100 130
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 30 V, ID = 32.5 A,
RG = 25
-- 20
50
-- 160 330
-- 90 190
(Note 4, 5) -- 105 220
VDS = 48 V, ID = 65 A,
VGS = 10 V
(Note 4, 5)
-- 48
-- 12
-- 19.5
65
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 65
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 65 A
-- -- 260
-- -- 1.5
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 65 A,
-- 62
dIF / dt = 100 A/µs
(Note 4) -- 110
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 180µH, IAS = 65A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 65A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
nC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/6
http://www.thinkisemi.com/


Part Number FQP65N06
Description N-Channel Power MOSFET
Maker Thinki Semiconductor
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FQP65N06 Datasheet PDF






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