FQP65N06 mosfet equivalent, n-channel power mosfet.
* 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
* Low gate charge ( typical 48 nC)
* Low Crss ( typical 100 pF)
* Fast switching
* 100% avalanche tested
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This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche c.
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