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FQP65N06 Datasheet N-Channel Power MOSFET

Manufacturer: Thinki Semiconductor

Datasheet Details

Part number FQP65N06
Manufacturer Thinki Semiconductor
File Size 1.12 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FQP65N06 Datasheet

General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

The TO-220M pkg is well suited for adaptor power unit and small power inverter application.

Overview

FQP65N06 ® FQP65N06 Pb Pb Free Plating Product 65A,60V Heatsink Planar N-Channel Power.

Key Features

  • 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V.
  • Low gate charge ( typical 48 nC).
  • Low Crss ( typical 100 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating 1. Gate { { 2. Drain.
  • ◀▲.
  • { 3. Source BVDSS = 60V RDS(ON) = 0.016 ohm ID = 65A General.