GB352N Datasheet | Thinki Semiconductor

Feature : Low leakage Low forward voltage drop High current capability High forward surge current capability Application: Block Diode/Alternator Diode with AEC-Q101 Grade Quality Stack Silicon Diffused Diode alternative Special for Automotive AC Alternator rectifier application BLOCK/TO-230/BA/MR/K series Mechanical Data: Technology: Latest Glass Passivation Pellet/Cu Clip Bonding Case: Vacuum soldered/sintered temperature < 260 Cathode Polarity: As marked on body Lead: Plated lead, solderable per MIL-STD-202E method 208C Mounting: BLOCK/TO-230/BA/MR/K series package type Case Lead GB352P GB353P GB354P GB355P GB356P Positive Suffix:"P" Case Lead GB352N GB353N GB354N GB355N GB356N Negative Suffix:"N" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS - Ratings at 25℃ ambient temperature unless otherwise specified - Single Phase, half wave, 60Hz, resistive or inductive load - For capacitive load derate current by 20% Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current, At TC = 105℃ Peak Forward Surge Current 8.3m S single half sine wave superimposed on rated load (JEDEC method) Rating for fusing (t<8.3ms) Maximum Instantaneous Forward Voltage Drop at 100A Maximum DC Reverse Current at Rated TA=25℃ DC Blocking Voltage TA=100℃ SYMBOLS V RRM V RMS V DC GB352N 200 140 200 GB353N 300 210 300 GB354N 400 280 400 GB355N GB356N UNIT Volts Volts...