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GF30100MG - 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier

Download the GF30100MG datasheet PDF. This datasheet also covers the GF3035MG variant, as both devices belong to the same 30.0 ampere surface mount photovoltaic bypass schottky barrier rectifier family and are provided as variant models within a single manufacturer datasheet.

Features

  • TO-263 Unit : inch (mm) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (GF3035MG-ThinkiSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number GF30100MG
Manufacturer Thinki Semiconductor
File Size 335.01 KB
Description 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
Datasheet download datasheet GF30100MG Datasheet

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Other Datasheets by Thinki Semiconductor

Part Number Description
GF30200MG 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
GF3035MG 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
GF3045MG 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
GF3050MG 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
GF3060MG 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GF3035MG thru GF30200MG ® Pb Free Plating Product GF3035MG thru GF30200MG Pb 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier Features TO-263 Unit : inch (mm) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: JEDEC TO-263/D2PAK molded plastic body Terminals: Pure tin plated, lead free.
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