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GF30200MG Datasheet Preview

GF30200MG Datasheet

30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier

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GF3035MG thru GF30200MG
®
Pb Free Plating Product
GF3035MG thru GF30200MG
Pb
30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
Features
TO-263
Unit : inch (mm)
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-263/D2PAK molded plastic body
Terminals: Pure tin plated, lead free. solderable
per MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
LEFT PIN
RIGHT PIN
BOTTOM SIDE
HEAT SINK
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol GF30- GF30- GF30- GF30- GF30- GF30- GF30- Units
35MG 45MG 50MG 60MG 90MG 100MG 200MG
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125OC
VRRM 35 45 50 60 90 100 200 V
VRMS 24 31 35 42 63 70 140 V
VDC 35 45 50 60 90 100 200 V
I(AV) 30 A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC
IFRM
58
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC IFSM 250 A
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=30A,
IF=30A,
TTCC==12255oCoC
Maximum Instantaneous Reverse Current
@Tc=25 oC at Rated DC Blocking Voltage (Note 2)
@ Tc=125 oC
IRRM
VF
IR
1.0
0.63
0.57
0.8
15
0.5 A
0.75 0.85 0.95 V
0.65
0.75 0.92
0.8 0.8 0.8 mA
10 7.5 5 mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Typical Junction Capacitance
Cj
600
pF
Maximum Typical Thermal Resistance(Note 3)
Operating Junction Temperature Range
Storage Temperature Range
RθJC
TJ
TSTG
2.5
-65 to +150
-65 to +175
oC/W
oC
oC
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg with Heatsink Size of 2” x 3”x 0.25” Al-Plate.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/




Thinki Semiconductor

GF30200MG Datasheet Preview

GF30200MG Datasheet

30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier

No Preview Available !

GF3035MG thru GF30200MG
®
RATINGS AND CHARACTERISTIC CURVES(GF3035MG thru GF30200MG)
FIG.1- FORWARD CURRENT DERATING CURVE
38
RESISTIVE OR
INDUCTIVE LOAD
30
20
16
8
0
0 50 100
CASE TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
40
150
10 Tj=1250C
Pulse Width=300 s
1% Duty Cycle
1
Tj=250C
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
350
Tj=Tj max.
300
8.3ms Single Half Sine Wave
JEDEC Method
250
200
150
100
50
1 10 100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
50
10
Tj=125 0C
1
Tj=250C
0.1
0.1 GF3035MG-GF3045MG
GF3050MG-GF3060MG
GF3090MG-GF30200MG
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
6,000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
1,000
500
0.01
GF3035MG-GF3045MG
GF3050MG-GF30200MG
0.001
0
20 40
60 80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
100
10.0
1
100
0.1
1 10
REVERSE VOLTAGE. (V)
0.1
100 0.01 0.1
1
10
T, PULSE DURATION. (sec)
100
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/


Part Number GF30200MG
Description 30.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
Maker Thinki Semiconductor
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GF30200MG Datasheet PDF






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