IRF640PBF
Features
̰ RDS(on) (Max 0.18 ˟ )@VGS=10V ̰ Gate Charge (Typical 44n C) ̰ Improved dv/dt Capability ̰ High ruggedness ̰ 100% Avalanche Tested
1.Gate
2.Drain 3.Source
BVDSS = 200V RDS(ON) = 0.18 ohm ID = 18A
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.
TO-220C
Absolute Maximum Ratings
Symbol VDSS
IDM VGS EAS EAR dv/dt
TSTG, TJ TL
Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction...
