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IRFZ44 - N-Channel Trench Power MOSFET

Datasheet Summary

Description

The IRFZ44 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM.

Features

  • VDS=60V;ID=45A@ VGS=10V; RDS(ON).

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Datasheet Details

Part number IRFZ44
Manufacturer Thinki Semiconductor
File Size 416.93 KB
Description N-Channel Trench Power MOSFET
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IRFZ44 ® Pb Free Plating Product IRFZ44 Pb 45 Ampere Typical N-Channel Trench Power MOSFETs General Description The IRFZ44 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM. Features ● VDS=60V;ID=45A@ VGS=10V; RDS(ON)<7.5mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply G DS TO-251 Top View Schematic Diagram VDSS = 60 V IDSS = 45 A RDS(ON) = 6.0 mΩ Table 1.
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