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Thinki Semiconductor

MBR3045PT Datasheet Preview

MBR3045PT Datasheet

30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers

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MBR3035PT thru MBR30200PT
®
Pb Free Plating Product
MBR3035PT thru MBR30200PT
Pb
30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-247AD/TO-3P molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.2245 ounces, 6.3673 grams.
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.199(5.05)
0.175(4.45)
0.095(2.40)
0.030(0.75)
0.017(0.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
VRRM
VRMS
VDC
IF(AV)
IFRM
PT PT PT PT PT PT PT PT
35 45 50 60 90 100 150 200
24 31 35 42 63 70 105 140
35 45 50 60 90 100 150 200
30
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
Peak repetitive reverse surge Current (Note 1)
IRRM
2
1
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25
IF=15A, TJ=125
IF=30A, TJ=25
IF=30A, TJ=125
-
0.75
0.85
0.95 1.05
VF 0.60 0.65 0.75 0.92 -
0.82 -
- 1.02 1.10
0.73 -
- 0.98 -
Maximum reverse current @ rated VR TJ=25
TJ=125
1
IR 20
15
0.5
10
0.1
Voltage rate of change,(Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: 2.0μs Pulse Width, f=1.0KHz
dV/dt
RθJC
TJ
TSTG
10,000
1.4
- 55 to +150
- 55 to +150
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
UNIT
V
V
V
A
A
A
A
V
mA
V/μs
OC/W
OC
OC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/




Thinki Semiconductor

MBR3045PT Datasheet Preview

MBR3045PT Datasheet

30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers

No Preview Available !

MBR3035PT thru MBR30200PT
®
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
35
30
25
20
15
10
5
0
0
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
25 50
75 100 125 150
CASE TEMPERATURE ()
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
TJ=125
10
1
TJ=25
0.1
MBR3035PT-45PT
MBR3050PT-60PT
MBR3090PT-200PT
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
10000
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
MBR3035PT-MBR3045PT
f=1.0MHz
Vsig=50mVp-p
1000
MBR3050PT-MBR3060PT
100
0.1
MBR3090PT-MBR30200PT
1 10
REVERSE VOLTAGE (V)
100
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
PER LEG
225
200
175
150
125
100
75
50
25
0
1
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
TJ=125
10
1
0.1
0.01
TJ=25
0.001
0
MBR3035PT-3045PT
MBR3050PT-30200PT
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
10
1
0.1
0.01
0.1 1 10
T-PULSE DURATION(s)
100
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/


Part Number MBR3045PT
Description 30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers
Maker Thinki Semiconductor
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MBR3045PT Datasheet PDF





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