Datasheet Details
| Part number | MM30F120B |
|---|---|
| Manufacturer | Thinki Semiconductor |
| File Size | 1.58 MB |
| Description | 1200Volt SwitchMode Single Fast Recovery Epitaxial Diode |
| Datasheet | MM30F120B-ThinkiSemiconductor.pdf |
|
|
Overview: MM30F120B ® MM30F120B Pb Pb Free Plating Product 30 Ampere,1200Volt SwitchMode Single Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic.
| Part number | MM30F120B |
|---|---|
| Manufacturer | Thinki Semiconductor |
| File Size | 1.58 MB |
| Description | 1200Volt SwitchMode Single Fast Recovery Epitaxial Diode |
| Datasheet | MM30F120B-ThinkiSemiconductor.pdf |
|
|
|
MM30F120B using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics.
ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C.
Reverse Voltage 1200 V V RRM Maximum Repetitive Reverse Voltage 1200 V I F(AV) Average Forward Current TC=110°C 30 A IF(RMS) RMS Forward Current TC=110°C 42 A I FSM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine 300 A PD Power Dissipation 115 W TJ Junction Temperature -40 to +150 °C T STG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R θJC Thermal Resistance Weight ELECTRICAL CHARACTERISTICS Junction-to-Case 1.1 °C /W 7.0 g TC=25°C unless otherwise specified Symbol Parameter I RM Reverse Leakage Current Test Conditions VR=1200V VR=1200V, TJ=125°C Min.
| Part Number | Description |
|---|