MUR1660CT Datasheet | Thinki Semiconductor

Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:As marked on diode body Mounting position: Any Weight: 2.03 grams .038(0.96) .019(0.50) .177(4.5)MAX Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc.. .548(13.93) .025(0.65)MAX .1(2.54) .1(2.54) Case Case Case Positive mon Cathode Suffix "CT" Negative mon Anode Suffix "CA" Doubler Series Connection Suffix "GD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25o C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. mon Cathode Suffix "CT" mon Anode Suffix "CA" Anode and Cathode Coexistence Suffix "GD" MUR1605CT MUR1610CT MUR1620CT MUR1630CT MUR1640CT MUR1660CT SYMBOL VRRM VRMS VDC IF(AV) MUR1605CA MUR1610CA MUR1620CA MUR1630CA MUR1640CA MUR1660CA UNIT MUR1605GD MUR1610GD MUR1620GD MUR1630GD MUR1640GD MUR1660GD Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range o o o 50 35 50 100 70 100 200 140 200 16.0 300 210 300 400 280 400 600 420 600 IFSM 0.98 10.0 250 35 90 2.2 -55 to +...