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MUR1660G Datasheet Preview

MUR1660G Datasheet

16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes

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MUR1620G thru MUR1660G
®
MUR1620G thru MUR1660G
Pb Free Plating Product
Pb
16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
Mechanical Data
¬ Case: Molded TO-220AC
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:Color band denotes cathode
¬ Mounting position: Any
¬ Weight: 2.1 gram approximately
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
@TA =125
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 16.0A DC
Maximum DC Reverse Current @TJ=25
at Rated DC Blocking Voltage @TJ=125
Maximum Reverse Recovery Time(Note1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
I(AV)
MUR1620G
200
140
200
IFSM
VF
IR
TRR
CJ
RθJA
TJ,TSTG
0.95
NOTES:1.Measured with IF=0.5A,IR=1A,IRR=0.25A
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
3.Thermal resistance junction to ambient
MUR1640G
400
280
400
16.0
300
1.25
5.0
50
35-50
80
2.0
-55 to + 150
MUR1660G
600
420
600
UNIT
V
V
V
A
A
1.50 V
μA
nS
pF
/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/




Thinki Semiconductor

MUR1660G Datasheet Preview

MUR1660G Datasheet

16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes

No Preview Available !

MUR1620G thru MUR1660G
®
RATING AND CHARACTERTIC CURVES(MUR1620G thru MUR1660G)
FIG.1- TYPICAL FORWARD CURRENT DERATING CURVE
20
16
12
SINGLE PHASE HALF
8
WAVE 60HZ
RESISTIVE OR
INDUCTIVE LOAD
4
0
0 125
AMBIENT TEMPERATURE
250
FIG.3-MAXIMUM NON-REPETITVE FORWARD SURGE CURRENT
300
250
200
150
100
50
0
1
8.3 ms Single Half-Sine-Wave
(JEDEC METOD)
2 5 10 20
NUMBER5OF CYCLES AT 60HZ
50 100
1000
FIG.2-TYPICAL REVERSE
CHARACTERISTICS
TJ=125°C
100
10
TJ=25°C
1.0
0.1
20 40 60 80 100 120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE(%)
FIG.4-TYPICAL INSTANTAEOUS
FORWARD CHARACTERISTICS
40
20 MUR1620G
10
MUR1660G
4
2
1.0 MUR1640G
0.4 TJ=25°C
PULSE WIDTH 300uS
0.2 1% DUTY CYCLE
0.1
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
200
100
40
20
10 TJ=25°C
4
2
1
0.1 0.2
0.4
12
4 10 20 40 100
REVERSE VOLTAGE,(V)
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/


Part Number MUR1660G
Description 16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes
Maker Thinki Semiconductor
Total Page 2 Pages
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