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MUR60120 Datasheet Single Fast Recovery Epitaxial Diode

Manufacturer: Thinki Semiconductor

Overview: MUR60120 ® MUR60120 Pb Pb Free Plating Product 60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode APPLICATION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic.

Datasheet Details

Part number MUR60120
Manufacturer Thinki Semiconductor
File Size 665.66 KB
Description Single Fast Recovery Epitaxial Diode
Datasheet MUR60120-ThinkiSemiconductor.pdf

General Description

MUR60120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.

ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C.

Reverse Voltage 1200 V V RRM Maximum Repetitive Reverse Voltage 1200 V I F(AV) Average Forward Current TC=110°C 60 A IF(RMS) RMS Forward Current TC=110°C 84 A I FSM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine 500 A PD Power Dissipation 312 W TJ Junction Temperature -40 to +150 °C T STG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended(M3) 1.1 N·m R θJC Thermal Resistance Weight ELECTRICAL CHARACTERISTICS Junction-to-Case 0.4 °C /W 6.0 g TC=25°C unless otherwise specified Symbol Parameter I RM Reverse Leakage Current Test Conditions VR=1200V VR=1200V, TJ=125°C Min.

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