MUR880G Datasheet | Thinki Semiconductor

Features ‹ Epitaxial wafer with good soft recovery characteristics ‹ Fast recovery time for hight efficiency ‹ Low reverse leakage current ‹ High surge capacity Mechanical Data ‹ Case: Heatsink TO-220AC/TO-220-2P ‹ Terminals: Lead solderable per MIL-STD-202, Method 208 ‹ Polarity: As marked ‹ Standard packaging: Any ‹ Weight: 0.08 ounces, 1.9 gram approximately TO-220AC/TO-220-2L .419(10.66) .387(9.85) .139(3.55) MIN .038(0.96) .019(0.50) .1(2.54) .1(2.54) .177(4.5)MAX .50(12.7)MIN .269(6.85) .226(5.75) .624(15.87) .548(13.93) Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .025(0.65)MAX TO-220AC ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device body Repetitive peak reverse voltage VRRM Reverse voltage, total rms value VR(RMS) Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Junction temperature IF(AV) IFSM TJ 8 100 -55 to +175 Storage temperature TSTG -55 to +175 UNIT V V A A °C °C Rev.08C © 2006 Thinki Semiconductor Co., Ltd. Page 1/3 http://.thinkisemi./ THERMAL PERFORMANCE PARAMETER SYMBOL Junction-to-lead thermal resistance RӨJL...