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Thinki Semiconductor

STTH812D Datasheet Preview

STTH812D Datasheet

SwitchMode Single Fast Recovery Epitaxial Diode

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STTH812D
®
STTH812D
Pb
Pb Free Plating Product
10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-220AC/TO-220C-2P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
STTH812D using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
V RRM
I F(AV)
I F(RMS)
I FSM
PD
TJ
T STG
Torque
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
TC=110°C
TC=110°C
TJ=45°C, t=10ms, 50Hz, Sine
RecommendedM3
1200
1200
10
15
100
70
-40 to +150
-40 to +150
1.1
V
V
A
A
A
W
°C
°C
N·m
R θJC
Thermal Resistance
Junction-to-Case
1.8 °C /W
Weight
ELECTRICAL CHARACTERISTICS
2.2 g
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
IRM Reverse Leakage Current
VR=1200V
VR=1200V, TJ=125°C
-- -- 100 µA
-- -- 500 µA
VF Forward Voltage
I F =10A
IF=10A, TJ=125°C
-- 2.4 --
-- 1.85 --
V
V
trr Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs -- 22 --
ns
trr Reverse Recovery Time
VR=600V, IF=10A
-- 44 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 3.5 --
A
trr Reverse Recovery Time
VR=600V, IF=10A
-- 220 --
ns
IRRM Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 6.5 --
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/3
http://www.thinkisemi.com/




Thinki Semiconductor

STTH812D Datasheet Preview

STTH812D Datasheet

SwitchMode Single Fast Recovery Epitaxial Diode

No Preview Available !

STTH812D
®
20
16
TJ =125°C
12
8
4 TJ =25°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VFV
Fig1. Forward Voltage Drop vs Forward Current
25
VR=600V
TJ =125°C
20
IF=20A
15
10
IF=10A
IF=5A
5
0
0 200 400 600 800 1000
diF/dtA/μs
Fig3. Reverse Recovery Current vs diF/dt
1.4
1.2
1.0
0.8
0.6
IRRM
0.4
0.2 trr
Qrr
0
0 25 50 75 100 125 150
TJ (°C)
Fig5. Dynamic Parameters vs Junction Temperature
350
300
VR=600V
TJ =125°C
250
IF=20A
200
150
IF=10A
100 IF=5A
50
0
0 200 400 600 800 1000
diF/dtA/μs
Fig2. Reverse Recovery Time vs diF/dt
1500
1200
VR=600V
TJ =125°C
IF=20A
900
600
IF=10A
IF=5A
300
0
0 200 400 600 800 1000
diF/dtA/μs
Fig4. Reverse Recovery Charge vs diF/dt
10
1
10-1
10-2
Duty
0.5
0.2
0.1
0.05
Single Pulse
10-310-4
10-3
10-2
10-1
1
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/3
http://www.thinkisemi.com/


Part Number STTH812D
Description SwitchMode Single Fast Recovery Epitaxial Diode
Maker Thinki Semiconductor
Total Page 3 Pages
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