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Thinki Semiconductor

TSF10N60C Datasheet Preview

TSF10N60C Datasheet

600V Insulated N-Channel Type Power MOSFET

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TSF10N60C
®
TSF10N60C
Pb Free Plating Product
Pb
10.3A,600V Insulated N-Channel Type Power MOSFET
Features
RDS(on) (Max 0.75 )@VGS=10V
Gate Charge (Typical 45nC)
Improved dv/dt Capability
High ruggedness
100% Avalanche Tested
1. Gate {
{ 2. Drain
◀▲
{ 3. Source
BVDSS = 600V
RDS(ON) = 0.75 ohm
ID = 10.3A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220F pkg is well suited for
adaptor power unit and small power inverter application.
TO-220F
23
1
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain to Source Voltage
Continuous Drain Current(@TC = 25 °C)
Continuous Drain Current(@TC = 100 °C)
IDM
VGS
EAS
EAR
dv/dt
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
TSTG, TJ
Operating Junction Temperature & Storage Temperature
TL
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Value
TSP10N60C TSF10N60C
600
Units
V
10.3
10.3*
A
6.5 6.5* A
(Note 1)
(Note 2)
(Note 1)
(Note 3)
41.2
41.2*
±30
822
15.8
5.0
A
V
mJ
mJ
V/ns
158 57 W
1.27
0.45
W/°C
- 55 ~ +150
°C
300 °C
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Maximum value
TSP10N60C TSF10N60C
0.79
2.21
62.5
62.5
Units
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/7
http://www.thinkisemi.com/




Thinki Semiconductor

TSF10N60C Datasheet Preview

TSF10N60C Datasheet

600V Insulated N-Channel Type Power MOSFET

No Preview Available !

TSF10N60C
®
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/ Breakdown Voltage Temperature
Δ TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
ID = 250uA, referenced to 25 °C
VDS =600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
VDS = VGS, ID = 250uA
VGS =10 V, ID =5.15A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Dynamic Characteristics
VGS =0 V, VDS =25V, f = 1MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge(Miller Charge)
VDD =300V, ID =10.3A, RG =25
see fig. 13.
(Note 4, 5)
VDS =480V, VGS =10V, ID =10.3A
see fig. 12.
(Note 4, 5)
Min
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =10.3A, VGS =0V
trr Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=10.3A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L =14.2mH, IAS =10.3A, VDD = 50V, RG = 50 , Starting TJ = 25°C
3. ISD 10.3A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ Max Units
--V
0.56 - V/°C
- 1 uA
- 10 uA
- 100 nA
-
-100
nA
- 4.0
0.61 0.75
V
805 1046
155 202
21 27
pF
25 60
85 180
133 276
53 116
45 56
9-
12.4
-
ns
nC
Typ.
-
-
-
403
4.8
Max.
10.3*
41.2*
1.5
-
-
Unit.
A
V
ns
uC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/7
http://www.thinkisemi.com/


Part Number TSF10N60C
Description 600V Insulated N-Channel Type Power MOSFET
Maker Thinki Semiconductor
Total Page 7 Pages
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