TSF10N60C
Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Key Features
- RDS(on) (Max 0.75 Ω )@VGS=10V
- Gate Charge (Typical 45nC)
- Improved dv/dt Capability
- High ruggedness
- 100% Avalanche Tested
- Source BVDSS = 600V RDS(ON) = 0.75 ohm ID = 10.3A
