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Thinki Semiconductor

YG225C4 Datasheet Preview

YG225C4 Datasheet

Fast Recovery Half Bridge Rectifier

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YG225C2 thru YG225C6
®
Pb Free Plating Product
YG225C2/YG225C4/YG225C6
Pb
10 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit:mm
Mechanical Data
Case: Fully Isolated Molding TO-220FP
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Positive
Negative
Doubler
Series Connection
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "C2"
Suffix "N2"
Suffix "D2"
Suffix "S2"
Suffix "C4"
Suffix "N4"
Suffix "D4"
Suffix "S4"
Suffix "C6"
Suffix "N6"
Suffix "D6"
Suffix "S6"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL YG225C2
Maximum Recurrent Peak Reverse Voltage VRRM
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 5.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
IR
Trr
CJ
R JC
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
YG225C4
400
280
400
10.0
100
1.3
5.0
100
35
65
2.2
-55 to +150
YG225C6 UNIT
600
V
420
V
600
V
A
A
1.7
V
uA
uA
nS
pF
oC/W
oC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/




Thinki Semiconductor

YG225C4 Datasheet Preview

YG225C4 Datasheet

Fast Recovery Half Bridge Rectifier

No Preview Available !

YG225C2 thru YG225C6
®
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
6
4
2
60 Hz Resistive or
Inductive load
0
0
50
100
150
CASE TEMPERATURE, oC
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
YG225C2
YG225C4
5
YG225C6
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
100
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
80
60
40
20
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125oC
100
10
TJ=25oC
1
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/



Part Number YG225C4
Description Fast Recovery Half Bridge Rectifier
Maker Thinki Semiconductor
Total Page 2 Pages
PDF Download

YG225C4 Datasheet PDF





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