XP161A11A1PR-G mosfet equivalent, power mosfet.
Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V
: Rds(on)=0.105Ω@ Vgs=4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channe.
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery systems
*FEATU.
The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-.
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