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XP161A1355PR-G Datasheet Preview

XP161A1355PR-G Datasheet

Power MOSFET

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XP161A1355PR-G
Power MOSFET
ETR1124_003
GENERAL DESCRIPTION
The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
APPLICATIONS
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems
FEATURES
Low On-State Resistance : Rds (on)= 0.05Ω@ Vgs = 4.5V
: Rds (on)= 0.07Ω@ Vgs = 2.5V
: Rds (on)= 0.15Ω@ Vgs = 1.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 1.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
PIN CONFIGURATION/
MARKING
G : Gate
S : Source
D : Drain
PRODUCT NAME
PRODUCT NAME
XP161A1355PR
XP161A1355PR-G(*)
PACKAGE
SOT-89
SOT-89
ORDER UNIT
1,000/Reel
1,000/Reel
(*) The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Ta = 25
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss
20
V
Gate-Source Voltage
Vgss ±8
V
Drain Current (DC)
Id
4
A
Drain Current (Pulse)
Idp
16
A
Reverse Drain Current
Idr
4
A
Channel Power Dissipation *
Pd
2
W
Channel Temperature
Tch
150
Storage Temperature
Tstg -55~150
* When implemented on a ceramic PCB
1/5




Torex

XP161A1355PR-G Datasheet Preview

XP161A1355PR-G Datasheet

Power MOSFET

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XP161A1355PR-G
ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Idss
Igss
Vgs(off)
Drain-Source On-State Resistance *1 Rds(on)
Vds=20V, Vgs= 0V
Vgs= ±8V, Vds= 0V
Id= 1mA, Vds= 10V
Id= 2A, Vgs= 4.5V
Id= 2A, Vgs= 2.5V
Id= 0.5A, Vgs= 1.5V
Forward Transfer Admittance *1 | Yfs |
Id= 2A, Vds= 10V
Body Drain Diode
Forward Voltage
Vf
*1 Effective during pulse test.
If= 4A, Vgs= 0V
MIN.
-
-
0.5
-
-
-
TYP.
-
-
-
0.037
0.05
0.1
Ta = 25
MAX. UNITS
10
μA
±10 μA
1.2
V
0.050
Ω
0.07
Ω
0.15
Ω
-
10
-
S
-
0.85 1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds= 10V, Vgs=0V
f= 1MHz
MIN.
-
-
-
TYP.
390
210
90
Ta = 25
MAX. UNITS
-
pF
-
pF
-
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs= 5V, Id=2A
Vdd= 10V
MIN.
-
-
-
-
TYP.
10
15
85
45
Ta = 25
MAX. UNITS
-
ns
-
ns
-
ns
-
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
CONDITIONS
MIN.
Rth (ch-a) Implement on a ceramic PCB
-
TYP. MAX. UNITS
62.5
-
/W
2/5



Part Number XP161A1355PR-G
Description Power MOSFET
Maker Torex
Total Page 3 Pages
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