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XP161A1355PR-G - Power MOSFET

General Description

The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

Overview

XP161A1355PR-G Power MOSFET ETR11024-004 ■GENERAL.

Key Features

  • Low On-State Resistance : Rds(on)=0.05Ω@Vgs=4.5V : Rds(on)=0.07Ω@Vgs=2.5V : Rds(on)=0.15Ω@Vgs=1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Package : SOT-89 11 3x 1.
  • PIN.