XP263N1001TR-G
■ELECTRICAL CHARACTERISTICS
PARAMETER
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Drain-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward Voltage
SYMBOL
TEST CONDITIONS
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID= 250μA, VGS= 0V
VDS= 60V, VGS= 0V
VGS= ±20V, VDS= 0V
ID= 250uA, VDS= VGS
VGS= 10V, ID= 500mA
VGS= 4.5V, ID= 500mA
VDS= 20V, VGS= 0V
f= 1MHz
VDD= 10V, ID= 500mA
VGS= 10V
VDS= 20V, ID= 500mA
VGS= 10V
IS= 500mA, VGS= 0V
MIN.
60
-
-
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
1.7
0.18
0.23
180
32
22
10
8
35
10
3.6
0.6
0.8
0.7
Ta=25℃
MAX. UNITS
-
V
1
μA
±10
μA
2.4
V
0.25
Ω
0.33
Ω
-
pF
-
pF
-
pF
-
ns
-
ns
-
ns
-
ns
-
nC
-
nC
-
nC
1
V
■NOTES ON USE
1. Please use this IC within the absolute maximum ratings.
Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and
thermal stress may cause reliability degradation of the IC.
2. Torex places an importance on improving our products and their reliability.
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in
their systems.
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