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GT15J331
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J331
High-Power Switching Applications Motor Control Applications
• Fourth-generation IGBT • Enhancement mode type • High speed: tf = 0.10 μs (typ.) • Low saturation voltage: VCE (sat) = 1.75 V (typ.) • FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage
Collector current
Emitter-collector forward current
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
DC 1 ms DC 1 ms
VCES VGES
IC ICP IF IFM
PC
Tj Tstg
600
V
±20
V
15 A
30
15
A
30
A
70
W
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g.
15J331 Datasheet
