1SS302A - Silicon Epitaxial Planar Switching Diodes

Toshiba

Key Features

(1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.6 ns (typ. ) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit USM 1SS302A 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2014-12 2022-11-22 Rev.5.0 1SS302A 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Note Rating Unit Peak.

1SS302A silicon epitaxial planar switching diodes by Toshiba - Datasheet Preview

Datasheet Details

Part number	1SS302A
Manufacturer	Toshiba
File Size	186.97 KB
Description	Silicon Epitaxial Planar Switching Diodes
Datasheet	1SS302A Datasheet

Full PDF Text Transcription for 1SS302A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 1SS302A. For precise diagrams, and layout, please refer to the original PDF.

Switching Diodes Silicon Epitaxial Planar 1SS302A 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time ...

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atures (1) AEC-Q101 qualified (Note 1) (2) Fast reverse recovery time : trr = 1.6 ns (typ.) Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit USM 1SS302A 1: Anode 1 2: Cathode 2 3: Cathode1 / Anode 2 ©2017-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2014-12 2022-11-22 Rev.5.0 1SS302A 4.

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