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Toshiba Electronic Components Datasheet

1SS302A Datasheet

Silicon Epitaxial Planar Diode

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Switching Diodes Silicon Epitaxial Planar
1SS302A
1. Applications
• Ultra-High-Speed Switching
2. Features
(1) Fast reverse recovery time : trr = 1.6 ns (typ.)
(2) AEC-Q101 qualified
3. Packaging and Internal Circuit
1SS302A
1: Anode 1
2: Cathode 2
3: Cathode1 / Anode 2
USM
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
85 V
Reverse voltage
VR
80
Peak forward current
IFM (Note 1)
300 mA
Average rectified current
IO (Note 1)
100
Power dissipation
PD (Note 2)
100 mW
Non-repetitive peak forward surge current
IFSM (Note 1), (Note 3)
2
A
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 70%
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 3: Measured with a 10 ms pulse.
Start of commercial production
2014-12
1 2015-01-08
Rev.2.0


Toshiba Electronic Components Datasheet

1SS302A Datasheet

Silicon Epitaxial Planar Diode

No Preview Available !

5. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
trr
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0 V, f = 1 MHz
IF = 10 mA
See Fig. 5.1.
Min
Typ.
0.60
0.72
0.90
0.9
1.6
1SS302A
Max Unit
V
1.20
0.1 µA
0.5
3.0 pF
4.0 ns
6. Marking
Fig. 5.1 Reverse recovery time (trr) Test circuit
Fig. 6.1 Marking
2 2015-01-08
Rev.2.0


Part Number 1SS302A
Description Silicon Epitaxial Planar Diode
Maker Toshiba
Total Page 6 Pages
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