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Toshiba Electronic Components Datasheet

1SS307E Datasheet

Silicon Epitaxial Planar Diode

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Switching Diodes Silicon Epitaxial Planar
1SS307E
1. Applications
• General-Purpose Rectifiers
2. Features
(1) Very low reverse current. : IR = 10 nA (max)
(2) AEC-Q101 qualified (Note 1)
Note 1: For detail information, please contact to our sales.
3. Packaging and Internal Circuit
ESC
1SS307E
1: Cathode
2: Anode
Start of commercial production
2015-04
1 2015-06-11
Rev.3.0


Toshiba Electronic Components Datasheet

1SS307E Datasheet

Silicon Epitaxial Planar Diode

No Preview Available !

1SS307E
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
85 V
Reverse voltage
VR 80
Peak forward current
IFM 300 mA
Average rectified current
IO 100
Power dissipation
PD (Note 1)
150
mW
Non-repetitive peak forward surge current
IFSM (Note 2)
1
A
Junction temperature
Tj 150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 2: Measured with a 10 ms pulse.
5. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Forward voltage
Reverse current
Total capacitance
Symbol
VF
IR
Ct
Test Condition
IF = 100 mA
VR = 80 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.9 1.3 V
  10 nA
2.0 6.0 pF
6. Marking
Fig. 6.1 Marking
2 2015-06-11
Rev.3.0


Part Number 1SS307E
Description Silicon Epitaxial Planar Diode
Maker Toshiba
Total Page 6 Pages
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