Datasheet4U.com

1SS307E - Diode

Toshiba

📥 Download Datasheet

1SS307E Datasheet Preview — Preview of 1SS307E PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	1SS307E
Manufacturer	Toshiba
File Size	136.21 KB
Description	Diode
Datasheet	1SS307E-Toshiba.pdf

1SS307E Product details

Features

(1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2018-11-16 Rev.5.0 1SS307E 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse v.

📁 1SS307E Similar Datasheet

1SS307 - Diode (Toshiba Semiconductor)
1SS300 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
1SS301 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
1SS302 - Diode (Toshiba Semiconductor)
1SS306 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
1SS308 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
1SS309 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor)
1SS311 - Diode (Toshiba Semiconductor)

Other Datasheets by Toshiba

1SS302A - Silicon Epitaxial Planar Switching Diodes
1SS361CT - Silicon Epitaxial Planar Type Diode
1SS361FV - Silicon Epitaxial Planar Type Diode
1SS362FV - Silicon Epitaxial Planar Type Diode
1SS385FV - Silicon Diode
1SS387CT - Switching Diodes

Published: Sep 18, 2016 |