Datasheet4U Logo Datasheet4U.com

1SS307E - Diode

Key Features

  • (1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2018-11-16 Rev.5.0 1SS307E 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 85 V Reverse v.

📥 Download Datasheet

Full PDF Text Transcription for 1SS307E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 1SS307E. For precise diagrams, and layout, please refer to the original PDF.

Switching Diodes Silicon Epitaxial Planar 1SS307E 1. Applications • General-Purpose Rectifiers 2. Features (1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 q...

View more extracted text
atures (1) Very low reverse current. : IR = 10 nA (max) (2) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit ESC 1SS307E 1: Cathode 2: Anode ©2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2018-11-16 Rev.5.0 1SS307E 4.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Toshiba Semiconductor Logo 1SS307 Diode Toshiba Semiconductor

More Datasheets from Toshiba

Part Number Description
1SS302A Silicon Epitaxial Planar Switching Diodes
1SS361CT Silicon Epitaxial Planar Type Diode
1SS361FV Silicon Epitaxial Planar Type Diode
1SS362FV Silicon Epitaxial Planar Type Diode
1SS385FV Silicon Diode
1SS387CT Switching Diodes
1SS176 HIGH SPEED SWITCHING DIODE
1SS177 SWITCHING DIODES
1SS178 SWITCHING DIODES
1SS403E Silicon Epitaxial Planar Switching Diodes