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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS361CT
Ultra High Speed Switching Application
z Small package
z Low forward voltage:
VF (3) = 0.9 V (typ.)
z Fast reverse recovery time: trr = 1.6 ns (typ.)
z Small total capacitance: CT = 0.9 pF (typ.)
1SS361CT
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P
85 80 300* 100* 2* 100**
Junction temperature Storage temperature
Tj
150
Tstg
−55 to 150
*: Unit rating. Total rating = Unit rating × 1.5 **: Mounted on FR4 board (10 mm × 10 mm × 1 mm (t))
Unit
V
V
TOP VIEW
mA
mA
A
CST3
mW
1.Anode1 2.Anode2 3.
1SS361CT Datasheet
