Full PDF Text Transcription for 1SS385FV (Reference)
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1SS385FV. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-sma...
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tions z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 23 0.32±0.05 1.2±0.05 0.8±0.05 0.4 0.4 Characteristic Symbol Rating Unit 0.13±0.05 Maximum (peak) reverse voltage VRM 15 V 0.5±0.05 Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current Surge current (10 ms) Power dissipation Junction temperature IO IFSM P Tj 100 * 1* 150** 125 mA A mW °C VESM 1. ANODE 1 2. ANODE 2 3.
1SS385FV Datasheet
