1SS417CT Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT 1SS417CT High Speed Switching Application Unit: mm CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03 0.65 0.05±0.03 Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current:.