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Toshiba Electronic Components Datasheet

1SS417CT Datasheet

Silicon Epitaxial Planar Type Diode

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1SS417CT pdf
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS417CT
1SS417CT
High Speed Switching Application
Unit: mm
Small package
Low forward voltage: VF (3) = 0.56 V (typ.)
Low reverse current: IR = 5 μA (max)
0.6±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
VRM
VR
IFM
IO
IFSM
P*
Tj
Tstg
Topr
45
40
200
100
1
100
125
55 to 125
40 to 100
V
V
mA
mA
A
mW
°C
°C
°C
* Mounted on a glass epoxy circuit board of 20 mm× 20 mm,
pad dimension of 4 mm× 4 mm.
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
CST2
JEDEC
JEITA
TOSHIBA
1-1P1A
Weight: 0.7 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 40 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
0.28
0.36
V
0.56 0.62
― ― 5 μA
15 pF
Marking
X
Equivalent Circuit (Top View)
1 2009-01-08


Toshiba Electronic Components Datasheet

1SS417CT Datasheet

Silicon Epitaxial Planar Type Diode

No Preview Available !

1SS417CT pdf
IF IF V- VFF
100
10 Ta=100°C
25
1
-25
0.1
0
0.2 0.4 0.6
FFOORRWWOARRDDVV OOLLTT AAGGEEVVFF(V(V) )
0.8
1SS417CT
110000u
101u0
1u1
1000n
10n0
IR IR -VVRR
Ta=100°C
75
50
25
0
1n0 -25
1000p
10p0
0
10 20 30
REVREERVSEERSVOELVT OAVLGRTE AG(VVER) V(VR)(V)
40
CCTT - VRVR
100
Ta=25°C
f=1MHz
10
1
0.1
0
10 20 30
RERVEEVRESRESEVOV LOVTLRAT GAGEEVVRR((VV))
40
140
120
100
80
60
40
20
0
0
P - Ta
Mounted on a glass epoxy
circuit board of 20 x 20mm,pad
dimension 4 x 4mm.
25 50 75 100 125
AMBIENT TEMPERATTaU(RE) Ta(°C)
150
2 2009-01-08


Part Number 1SS417CT
Description Silicon Epitaxial Planar Type Diode
Maker Toshiba
Total Page 3 Pages
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1SS417CT Datasheet PDF
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