1SS418 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5mA 1SS418 Unit: Using continuously under heavy loads (e.g.
1SS418 is Silicon Diode manufactured by Toshiba .
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF (3) = 0.23V (typ.)@ IF = 5mA 1SS418 Unit: Using continuously under heavy loads (e.g.