1SS419 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current:.
1SS419 is Silicon Diode manufactured by Toshiba .
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK Small package Low forward voltage: VF (3) = 0.56 V (typ.) Low reverse current:.