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1ZB10 - SILICON DIFFUSED TYPE ZENER DIODE

Download the 1ZB10 datasheet PDF (1ZB6.8 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon diffused type zener diode.

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Note: The manufacturer provides a single datasheet file (1ZB6.8-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Toshiba
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  • 1ZB150 - SILICON DIFFUSED TYPE ZENER DIODE
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Full PDF Text Transcription

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1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Unit: mm l Average Power Dissipation l Peak Reverse Power Dissipation l Zener Voltage l Tolerance of Zener Voltage l Plastic Mold Package : P = 1.0W : PRSM = 200W at tw = 200µs : VZ = 6.8~390V : ±10% MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL P Tj Tstg RATING 1.0 −40~150 −40~150 UNIT W °C °C MARK JEDEC JEITA TOSHIBA Weight: 0.18g ― ― 3−3F2A 1 2001-07-09 1ZB6.8~1ZB390 ELECTRICAL CHARACTERISTICS (Ta = 25°C) TYPE 1ZB6.8 1ZB7.5 1ZB8.2 1ZB9.
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