Toshiba 1ZB220-Z
SILICON DIFFUSED TYPE ZENER DIODE
| Part No. | 1ZB220-Z |
|---|---|
| Datasheet | 1ZB220-Z Download |
| Manufacturer |  Toshiba |
| Description | SILICON DIFFUSED TYPE ZENER DIODE |
| Buy | Stock & Price |
MAXIMUM RATINGS
(Ta = 25°C) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL P Tj Tstg RATING 1.0 −40~150 −40~150 UNIT W °C °C MARK JEDEC JEITA TOSHIBA Weight: 0.18g ― ― 3−3F2A 1 2001-07-09 1ZB6.8~1ZB390ELECTRICAL CHARACTERISTICS
(Ta = 25°C) TYPE 1ZB6.8 1ZB7.5 1ZB8.2 1ZB9.1 1ZB10 1ZB11 1ZB12 1ZB13 1ZB15 1ZB16 1ZB18 1ZB20 1ZB22 1ZB24 1ZB27 1ZB30 1ZB33 1ZB36 1ZB43 1ZB47 1ZB51 1ZB68 1ZB75 1ZB82 1ZB100 1ZB110 1ZB150 1ZB180 1ZB200 1ZB200−Y 1ZB200−Z 1ZB220 1ZB220−Y 1ZB220−Z ZENER CHARACTERISTICS ZENER VOLTAGE VZ (V) MIN TYP. MAX ZENER IMPEDANCE rd (Ω) MAX MEASURE− MENT CURRENT IZ (mA) 6.2 6.8 7.4 60 10 TEMPERATUR ECOEFFICIENT OF ZENER VOLTAGE αT (mV / °C) TYP. MAX 34 FORWARD VOLTAGE VF (V) MAX 1.2 MEASURE− MENT CURRENT IF (A) 0.2 REVERSE CURRENT IR (µA) MAX 10 MEASURE− MENT VOLTAGE VR (V) 3 6.8 7.5 8.3 30 10 4 5 1.2 0.2 10 4.5 7.4 8.2 9.1 30 10 4 6 1.2 0.2 10 4.9 8.2 9.1 10.1 30 10 5 8 1.2 0.2 10 5.5 9.0 10 11.0 30 10 6 9 1.2 0.2 10 6 9.9 11 12.1 30 10...
