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1ZB300-Z - SILICON DIFFUSED TYPE ZENER DIODE

Download the 1ZB300-Z datasheet PDF. This datasheet also covers the 1ZB6.8 variant, as both devices belong to the same silicon diffused type zener diode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (1ZB6.8-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1ZB300-Z
Manufacturer Toshiba
File Size 131.38 KB
Description SILICON DIFFUSED TYPE ZENER DIODE
Datasheet download datasheet 1ZB300-Z Datasheet

📁 Similar Datasheet

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1ZB300-Y (1ZB6.8 - 1ZB390) Zener Diodes Luguang Electronic
1ZB300 (1ZB6.8 - 1ZB390) Zener Diodes Luguang Electronic
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Other Datasheets by Toshiba

Part Number Description
1ZB300-X SILICON DIFFUSED TYPE ZENER DIODE
1ZB300-Y SILICON DIFFUSED TYPE ZENER DIODE
1ZB300 SILICON DIFFUSED TYPE ZENER DIODE
1ZB30 SILICON DIFFUSED TYPE ZENER DIODE
1ZB33 SILICON DIFFUSED TYPE ZENER DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1ZB6.8~1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 1ZB6.8~1ZB390 CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Unit: mm l Average Power Dissipation l Peak Reverse Power Dissipation l Zener Voltage l Tolerance of Zener Voltage l Plastic Mold Package : P = 1.0W : PRSM = 200W at tw = 200µs : VZ = 6.8~390V : ±10% MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL P Tj Tstg RATING 1.0 −40~150 −40~150 UNIT W °C °C MARK JEDEC JEITA TOSHIBA Weight: 0.18g ― ― 3−3F2A 1 2001-07-09 1ZB6.8~1ZB390 ELECTRICAL CHARACTERISTICS (Ta = 25°C) TYPE 1ZB6.8 1ZB7.5 1ZB8.2 1ZB9.
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