. High Gain at High Current . Low Saturation Voltage : VcE(sat)=0. 8V (Max. )
@ IC=5A, IB=0.5A . Excellent Area of Safe Operatings
Unit in mm
025.OMAX,.
Full PDF Text Transcription for 2N3715 (Reference)
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2N3715. For precise diagrams, and layout, please refer to the original PDF.
SILICON NPN TRIPLE DIFFUSED TYPE 2N3715 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS. FEATURES . High Gain at High Curren...
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AND SOLENOID DRIVES APPLICATIONS. FEATURES . High Gain at High Current . Low Saturation Voltage : VcE(sat)=0. 8V (Max.) @ IC=5A, IB=0.5A . Excellent Area of Safe Operatings Unit in mm 025.OMAX, *21.0 MAX oc5. g^, i.o+—aaoo94 , 30.2±0.2 c5c5 +1 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25C>C) Thermal Resistance Junction Temperature Storage Temperature Range SYMBOL VcBO VcEO VEBO ic IB PC 6 jc Tj T stg RATING 80 60 7 10 4 150 1.17 200 -65- 200 UNIT V V V A A W u c/w °c °C 1. BASE 2.
2N3715 Datasheet
