| Description | : ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N3905 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Low Leakage Current : ICEV= -50nA(Max.), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V . Excellent DC Current Gain Linearity . Low Saturation Voltage : V CE ( sat) =-0.4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ VCB =-5V .... |
| Features |
. Low Leakage Current
: ICEV= -50nA(Max.), T-BEV= 50nA(Max. @ V C E=-30V, Vbe=3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: V CE ( sat) =-0.4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance
: C b=4.5pF(Max.) @ VCB =-5V . Complementary to 2N3903
J EDEC
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°...
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| Datasheet |
 2N3905 Datasheet 63.77KB |
