| Description | : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4123 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance •• Cob=4pF(Max.) @ VcB=5V . Complementary to 2N4125 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBO... |
| Features |
. Low Leakage Current
: ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V
. Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA
. Low Collector Output Capacitance • • Cob=4pF(Max.) @ VcB=5V . Complementary to 2N4125 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 40 Collector-Emitter Voltage V... |
| Datasheet |
 2N4123 Datasheet 55.03KB |
