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2N4123 Datasheet, Toshiba

2N4123 Datasheet, Toshiba

2N4123

datasheet Download (Size : 55.03KB)

2N4123 Datasheet

2N4123 transistor equivalent, silicon npn transistor.

2N4123

datasheet Download (Size : 55.03KB)

2N4123 Datasheet

Features and benefits

. Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capaci.

Application

FEATURES . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat.

Image gallery

2N4123 Page 1 2N4123 Page 2

TAGS

2N4123
Silicon
NPN
Transistor
Toshiba

Manufacturer


Toshiba (https://www.toshiba.com/)

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