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2N4123 Datasheet Silicon NPN Transistor

Manufacturer: Toshiba

Overview: : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4123 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.

Datasheet Details

Part number 2N4123
Manufacturer Toshiba
File Size 55.03 KB
Description Silicon NPN Transistor
Datasheet 2N4123-Toshiba.pdf

Key Features

  • . Low Leakage Current : ICBO=50nA(Max. ) @ VCB=20V lEBO=50nA(Max. ) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max. ) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance.
  • Cob=4pF(Max. ) @ VcB=5V . Complementary to 2N4125.

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