| Description | t SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4124 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICBO = 50nA(Max.) @ V C B=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : v CE(sat)=0.3V(Max.) @ I C =50mA, I B =5mA . Low Collector Output Capacitance : C b=4pF(Max.) @ V C B=5V . Complementary to 2N4126 Unit in mm H 5 I MAX 1— X < Q46 C.5... |
| Features |
. Low Leakage Current
: ICBO = 50nA(Max.) @ V C B=20V lEBO=50nA(Max.) @ V£B=3V
. Low Saturation Voltage : v CE(sat)=0.3V(Max.) @ I C =50mA, I B =5mA
. Low Collector Output Capacitance : C b=4pF(Max.) @ V C B=5V
. Complementary to 2N4126
Unit in mm
H 5 I MAX
1— X <
Q46
C.5 6MAX.
1
J
0.4 5
1 1
,
-1
CD
5
1.27
i.27
10
"I
J
1
X
j'
1
...
|
| Datasheet |
 2N4124 Datasheet 55.14KB |
