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2N4125 Datasheet Silicon PNP Transistor

Manufacturer: Toshiba

Overview: SILICON PNP EPITAXIAL TYPE (PGT PROCESS) 2N4125 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.

2N4125 datasheet preview

Datasheet Details

Part number	2N4125
Manufacturer	Toshiba
File Size	54.36 KB
Description	Silicon PNP Transistor
Datasheet	2N4125-Toshiba.pdf

Key Features

. Low Leakage Current : IcBO=-50nA(Max. ) @ VCB=-20V lEBO=-50nA(Max. ) @ Veb=~3V . Low Saturation Voltage : VcE(sat)=-O. AV(Max. ) @ I c=-50mA, lB=-5mA . Low Collector Output Capacitance : C b=4-5pF(Max. ) @ Vcb=-5V . Complementary to 2N4123.

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