| Description | SILICON PNP EPITAXIAL TYPE (PGT PROCESS) 2N4125 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Low Leakage Current : IcBO=-50nA(Max.) @ VCB=-20V lEBO=-50nA(Max.) @ Veb=~3V . Low Saturation Voltage : VcE(sat)=-O.AV(Max.) @ I c=-50mA, lB=-5mA . Low Collector Output Capacitance : C b=4-5pF(Max.) @ Vcb=-5V . Complementary to 2N4123 MAXIMUM RATINGS (Ta=25°C) CH... |
| Features |
. Low Leakage Current
: IcBO=-50nA(Max.) @ VCB=-20V lEBO=-50nA(Max.) @ Veb=~3V
. Low Saturation Voltage : VcE(sat)=-O.AV(Max.) @ I c=-50mA, lB=-5mA
. Low Collector Output Capacitance : C b=4-5pF(Max.) @ Vcb=-5V
. Complementary to 2N4123
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C...
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| Datasheet |
 2N4125 Datasheet 54.36KB |
