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2N4126 Datasheet Silicon PNP Transistor

Manufacturer: Toshiba

Overview: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N4126 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.

2N4126 datasheet preview

Datasheet Details

Part number	2N4126
Manufacturer	Toshiba
File Size	55.09 KB
Description	Silicon PNP Transistor
Datasheet	2N4126-Toshiba.pdf

Key Features

. Low Leakage Current : IcBO=-50nA(Max. ) @ VcB=-20V lEBO=-50nA(Max. ) @ Veb=-3V . Low Saturation Voltage.
' vCE(sat)=-0-4V(Max. ) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ v C B=-5V . Complementary to 2N4124.

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More Datasheets from Toshiba

Part Number	Description
2N4123	Silicon NPN Transistor
2N4124	Silicon NPN Transistor
2N4125	Silicon PNP Transistor
2N4398	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
2N4399	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
2N4400	Silicon NPN Transistor

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