2N4398 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Toshiba

Datasheet Details

Part number	2N4398
Manufacturer	Toshiba
File Size	114.29 KB
Description	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Datasheet	2N4398-Toshiba.pdf

. Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min. ) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max. ) @ Ic=-30A, I B=-6A . Low Saturation Voltage: vCE(sat)=-0.75V (Max. ) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max. ) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability: P C=200W (Max. ) . Complementary to 2N5301.

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Published: Jul 16, 2018 |