2N4398 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Toshiba
Key Features
. Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min. ) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max. ) @ Ic=-30A, I B=-6A
. Low Saturation Voltage: vCE(sat)=-0.75V (Max. ) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max. ) @ I C=-10A, I B=-1.0A
. High Collector Power Dissipation Capability: P C=200W (Max. )
. Complementary to 2N5301.
Full PDF Text Transcription for 2N4398 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2N4398. For precise diagrams, and layout, please refer to the original PDF.
: SILICON PNP TRIPLE DIFFUSED TYPE 33 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATURES . Specification for hpE an...
View more extracted text
REGULATOR APPLICATIONS Unit in mm FEATURES . Specification for hpE and VcE(sat) UP to 30A: hpE=5.0 (Min.) @ VCE=-4.0V, I C=-30A VCE(sat)=-4.0V (Max.) @ Ic=-30A, I B=-6A . Low Saturation Voltage: vCE(sat)=-0.75V (Max.) @ I C=-10A, I B=-1.0A vBE(sat)="l-6V (Max.) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability: P C=200W (Max.) . Complementary to 2N5301 MAXIMUM RATINGS (Ta=25°C) 1. BASE 2. EMITTER COLLECTOR (CASE) TOSHIBA TO—2 4MA/T0— TC—3, TB— 2-21D1A Weight : 12. 6g CHARACTERISTIC SYMBOL - RATING Collector-Base Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current DC Peak V
2N4398 Datasheet
