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2SA1306B - PNP Transistor

Download the 2SA1306B datasheet PDF. This datasheet also covers the 2SA1306 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . High Transition Frequency : ff=100MHz (Typ. ) . Complementary to 2SC3298, 2SC3298A, 2S C3298B.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SA1306_Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SA1306B
Manufacturer Toshiba
File Size 87.32 KB
Description PNP Transistor
Datasheet download datasheet 2SA1306B Datasheet

📁 Similar Datasheet

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2SA1306A PNP Transistor INCHANGE
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Other Datasheets by Toshiba

Part Number Description
2SA1306 Silicon PNP Transistor
2SA1306A PNP Transistor
2SA1301 Silicon PNP Transistor
2SA1302 Silicon PNP Transistor
2SA1305 Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Transition Frequency : ff=100MHz (Typ.) . Complementary to 2SC3298, 2SC3298A, 2S C3298B MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SA1306 2SA1306A 2SA1306B VcBO Collector-Emitter Voltage 2SA1306 2SA1306A 2SA1306B v CEO Emitter-Base Voltage Collector Current VeBO ic Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range IB PC T J T stg RATING -160 -180 -200 -160 -180 -200 -5 -1.5 -0.15 20 150 -55-150 UNIT V V V A A W °C °C Unit in iTim 10.3MAX. 7.0 #3.2±0.2 /*l ^"13 S 'A wd o H 1 1 1.4 LftSS 0.76-0.15 i 2.5 4x0.2 5 1 1.2 M S S 2.