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2SA1931 - Silicon PNP Transistor

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm • Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC4881 Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −60 −50 −7 −5 −1 2.0 20 150 −55 to 150 Electrical Characteristics (Tc = 25°C) Unit V V V A A W °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.
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