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2SA816 - SILICON PNP EPITAXIAL TYPE TRANSISTOR

Features

  • High Breakdown Voltage : . Complementary to 2SC1626, V CEO =-80V 10.3 MAX. Unit in mm 03.6 ±0.2.

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Full PDF Text Transcription

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES • High Breakdown Voltage : . Complementary to 2SC1626, V CEO =-80V 10.3 MAX. Unit in mm 03.6 ±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage 'CEO Emitter-Base Voltage EBO Collector Current Emitter Current Collector Power Dissipation (Ta=25°C) Junction Temperature Storage Temperature Range T stg RATING -80 -80 -5 -750 750 1.5 150 -55^ 150 UNIT V mA mA °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C) i. BASE 2. COLLECTOR (HEAT SINK; 3. EMITTER TO-220AB TOSHIBA 2— IOAIA Mounting Kit No. AC75 Weight : 1.
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