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2SB995 Datasheet, Toshiba

2SB995 transistor equivalent, silicon pnp transistor.

2SB995 Avg. rating / M : 1.0 rating-13

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2SB995 Datasheet

Features and benefits

. High Breakdown Voltage : VCEq=-100V . Low Collector-Emitter Saturation Voltage : V C E(sat)=-2.0V(Max.) . Complementary to 2SD1355 . Recommended for 30W High-Fidelity A.

Application

FEATURES . High Breakdown Voltage : VCEq=-100V . Low Collector-Emitter Saturation Voltage : V C E(sat)=-2.0V(Max.) . Co.

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2SB995 Page 1 2SB995 Page 2

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