2SC2876
2SC2876 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. High Gain
: I 2 i e ) 2 =10. 5d B (Typ.), f=l GHz
. Low Noise Figure : NF=2.3d B (Typ.), f=l GHz
. High f T
- Low VCE ( sat )
: f T= 7.0GHz (Typ.) : V CE ( sat )=0.13V (Typ.)
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL Vc BO v CEO v EBO IB ic pc
Tj T stg
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
I EB0 v (BR) CEO h FE v CE(sat) v BE(sat)
Collector Output Capacitance
Cob
Reverse Transfer Capacitance
^re
Input Capacitance
Gib
Transition Frequency Insertion Gain Noise Figure f T IS 2 lel 2 NF
RATING UNIT
40 m A
80 m A
200 m W
°c
-55~125 °C
4.2 MAX . d
1. BASE 2. EMITTER 3. COLLECTOR 4. EMITTER
TOSHIBA Marking : MA Weight : 0.08g
TEST CONDITION V CB =10V, I E=0 v E b=iv, i c=o I c=5m A, I B =0 VCE=3V, I c=50m...